 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-3 package Complement to type 2N6648/6649/6650 DARLINGTON High DC current gain APPLICATIONS Designed for low and medium frequency power application such as power switching audio amplifer ,hammer drivers and shunt and series regulators PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6383 2N6384 2N6385 Absolute maximum ratings(Ta=ae ) SYMBOL PARAMETER ANG 2N6383 2N6384 2N6385 Fig.1 simplified outline (TO-3) and symbol VCBO VCEO INCH Collector-base voltage SEM E Open base CONDITIONS Open emitter OND IC TOR UC VALUE 40 60 80 40 60 80 UNIT V 2N6383 2N6384 Collector-emitter voltage V 2N6385 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25ae Open collector 5 10 15 0.25 100 200 -65~200 ae ae V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.75 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6383 2N6384 2N6385 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N6383 VCEO(SUS) Collector-emitter sustaining voltage 2N6384 2N6385 VCEsat-1 VCEsat-2 VBE-1 VBE-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage IC=5A; IB=10mA IC=10A ;IB=100mA IC=5A ; VCE=3V IC=10A ; VCE=3V 2N6383 2N6384 VCE=40V; IB=0 VCE=60V; IB=0 VCE=80V; IB=0 IC=0.2A ;IB=0 CONDITIONS MIN 40 60 80 2.0 3.0 2.8 4.5 V V V V V TYP. MAX UNIT SYMBOL ICEO Collector cut-off current 2N6385 ICEX Collector cut-off current HAN INC 2N6383 2N6384 SEM GE VEB=5V; IC=0 VCE=40V; VBE=-1.5V TC=125ae VCE=60V; VBE=-1.5V TC=125ae OND IC TOR UC 1.0 0.3 3.0 0.3 3.0 0.3 3.0 10 mA mA 2N6385 IEBO hFE-1 hFE-2 COB Emitter cut-off current DC current gain DC current gain Output capacitance VCE=80V; VBE=-1.5V TC=125ae mA IC=5A ; VCE=3V IC=10A ; VCE=3V IE=0; VCB=10V;f=1MHz 1000 100 20000 200 pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6383 2N6384 2N6385 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.10mm) 3 |
Price & Availability of 2N6383
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |